发明授权
US07804312B2 Silicon wafer for probe bonding and probe bonding method using thereof
有权
用于探针接合的硅晶片和使用其的探针接合方法
- 专利标题: Silicon wafer for probe bonding and probe bonding method using thereof
- 专利标题(中): 用于探针接合的硅晶片和使用其的探针接合方法
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申请号: US11569839申请日: 2005-06-14
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公开(公告)号: US07804312B2公开(公告)日: 2010-09-28
- 发明人: Jung-Hoon Lee
- 申请人: Jung-Hoon Lee
- 申请人地址: KR Seoul
- 专利权人: Phicom Corporation
- 当前专利权人: Phicom Corporation
- 当前专利权人地址: KR Seoul
- 代理机构: Daly, Crowley, Mofford & Durkee, LLP
- 优先权: KR2004-0043676 20040614
- 国际申请: PCT/KR2005/001806 WO 20050614
- 国际公布: WO2005/122240 WO 20051222
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
Disclosed herein are a silicon wafer for probe bonding and a probe bonding method using the same. The silicon wafer for probe bonding is improved in structure to facilitate probe bonding on a probe substrate. The probe bonding method involves bonding supporting beams on the silicon wafer to bumps on the probe substrate. The silicon wafer is formed at a surface thereof with probe tips and supporting beams on an end of each probe tip to have a redetermined arrangement pattern. The silicon wafer is further formed with openings from an upper surface to a lower surface thereof. A portion of each supporting beam opposite to the probe tips protrudes is exposed to the outside through the openings.
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