发明授权
US07804312B2 Silicon wafer for probe bonding and probe bonding method using thereof 有权
用于探针接合的硅晶片和使用其的探针接合方法

  • 专利标题: Silicon wafer for probe bonding and probe bonding method using thereof
  • 专利标题(中): 用于探针接合的硅晶片和使用其的探针接合方法
  • 申请号: US11569839
    申请日: 2005-06-14
  • 公开(公告)号: US07804312B2
    公开(公告)日: 2010-09-28
  • 发明人: Jung-Hoon Lee
  • 申请人: Jung-Hoon Lee
  • 申请人地址: KR Seoul
  • 专利权人: Phicom Corporation
  • 当前专利权人: Phicom Corporation
  • 当前专利权人地址: KR Seoul
  • 代理机构: Daly, Crowley, Mofford & Durkee, LLP
  • 优先权: KR2004-0043676 20040614
  • 国际申请: PCT/KR2005/001806 WO 20050614
  • 国际公布: WO2005/122240 WO 20051222
  • 主分类号: G01R31/02
  • IPC分类号: G01R31/02
Silicon wafer for probe bonding and probe bonding method using thereof
摘要:
Disclosed herein are a silicon wafer for probe bonding and a probe bonding method using the same. The silicon wafer for probe bonding is improved in structure to facilitate probe bonding on a probe substrate. The probe bonding method involves bonding supporting beams on the silicon wafer to bumps on the probe substrate. The silicon wafer is formed at a surface thereof with probe tips and supporting beams on an end of each probe tip to have a redetermined arrangement pattern. The silicon wafer is further formed with openings from an upper surface to a lower surface thereof. A portion of each supporting beam opposite to the probe tips protrudes is exposed to the outside through the openings.
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