发明授权
US07804723B2 Semiconductor memory device with signal aligning circuit 有权
具有信号对准电路的半导体存储器件

  • 专利标题: Semiconductor memory device with signal aligning circuit
  • 专利标题(中): 具有信号对准电路的半导体存储器件
  • 申请号: US11478092
    申请日: 2006-06-30
  • 公开(公告)号: US07804723B2
    公开(公告)日: 2010-09-28
  • 发明人: Hwang HurChang-Ho Do
  • 申请人: Hwang HurChang-Ho Do
  • 申请人地址: KR Gyeonggi-do
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Gyeonggi-do
  • 代理机构: IP & T Law Firm PLC
  • 优先权: KR10-2005-0090855 20050928; KR10-2006-0033765 20060413
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Semiconductor memory device with signal aligning circuit
摘要:
A signal aligning circuit includes a plurality of pads receiving input signals in parallel 1 bit by 1 bit; a first transferring unit for transferring the input signals as first signals in synchronization with a first clock signal of an internal clock, and transferring the input signals as second signals in synchronization with a second clock signal of the internal clock; a second transferring unit for transferring the first signals in synchronization with the second clock signal of the internal clock; and an aligning unit for aligning the first and second signals transferred from the first and second transferring units and outputting the aligned signal as output signals.
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