发明授权
- 专利标题： Semiconductor optical device and manufacturing method thereof
- 专利标题（中）： 半导体光学器件及其制造方法
-
申请号： US12053213申请日： 2008-03-21
-
公开(公告)号： US07804870B2公开(公告)日： 2010-09-28
- 发明人: Kan Takada , Mitsuru Ekawa , Tsuyoshi Yamamoto , Tatsuya Takeuchi
- 申请人： Kan Takada , Mitsuru Ekawa , Tsuyoshi Yamamoto , Tatsuya Takeuchi
- 申请人地址： JP Kawasaki JP Kanagawa
- 专利权人： Fujitsu Limited,Sumitomo Electric Device Innovations, Inc.
- 当前专利权人： Fujitsu Limited,Sumitomo Electric Device Innovations, Inc.
- 当前专利权人地址： JP Kawasaki JP Kanagawa
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-084593 20070328
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×1018 cm−3 and the Fe concentration is 1.8×1017 cm−3. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×1016 cm−3. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.
公开/授权文献
信息查询
