An apparatus for manufacturing a semiconductor or liquid crystal has, within a reaction chamber 1 to which a reactive gas is supplied, a ceramic holder 2 having a resistive heating element 7 embedded therein; and further comprises a ceramic cylindrical support member 3 one end of which supports the ceramic holder 2 and the other end of which is fixed to a portion of the reaction chamber 1, and an inert gas supply tube 4 and inert gas evacuation tube 5 each having an opening inside the cylindrical support member 3. It is preferable that the inert gas within the cylindrical support member 3 be maintained at less than 0.1 MPa (one atmosphere). By means of such an arrangement, oxidation and corrosion of electrodes provided on the rear surface of the ceramic holder can be prevented, without an oxidation-resistant seal or corrosion-resistant seal being applied. The semiconductor or liquid crystal manufacturing apparatus also ensures the thermal uniformity in the ceramic holder and eliminates useless power consumption. Moreover, the apparatus size can be reduced, and manufacturing costs can be decreased.