Invention Grant
- Patent Title: Phase-change memory using single element semimetallic layer
- Patent Title (中): 使用单元素半金属层的相变存储器
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Application No.: US12213234Application Date: 2008-06-17
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Publication No.: US07807989B2Publication Date: 2010-10-05
- Inventor: Tae-yon Lee , Ki-joon Kim , Jun-ho Lee , Cheol-kyu Kim
- Applicant: Tae-yon Lee , Ki-joon Kim , Jun-ho Lee , Cheol-kyu Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2008-0001431 20080104
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/336
Abstract:
Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.
Public/Granted literature
- US20090283738A1 Phase-change memory using single element semimetallic layer Public/Granted day:2009-11-19
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