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US07807989B2 Phase-change memory using single element semimetallic layer 有权
使用单元素半金属层的相变存储器

Phase-change memory using single element semimetallic layer
Abstract:
Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.
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