发明授权
- 专利标题： Thin film transistor substrate and method of making the same
- 专利标题（中）： 薄膜晶体管基板及其制造方法
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申请号： US11495911申请日： 2006-07-27
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公开(公告)号： US07808044B2公开(公告)日： 2010-10-05
- 发明人: Yong-uk Lee , Joon-hak Oh , Bo-sung Kim , Mun-pyo Hong
- 申请人： Yong-uk Lee , Joon-hak Oh , Bo-sung Kim , Mun-pyo Hong
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Innovation Counsel LLP
- 优先权： KR10-2005-0068553 20050727
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.
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