Invention Grant
- Patent Title: Current switch for high voltage process
- Patent Title (中): 电流开关用于高压工艺
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Application No.: US12099742Application Date: 2008-04-08
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Publication No.: US07808304B1Publication Date: 2010-10-05
- Inventor: Hong Liang Zhang
- Applicant: Hong Liang Zhang
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
In a current switch, a bias generation circuit electrically connected to a high voltage power supply generates a bias current. The bias current is mirrored by a current mirror containing a first plurality of transistors to a first one of a second plurality of transistors. The first one of the second plurality of transistors amplifies the mirrored bias current and transmits the amplified bias current to a second one of the second plurality of transistors. The second one of the second plurality of transistors sinks the amplified bias current into a node shared by an internal reference voltage, thereby putting the node in a first logic state. A third one of the second plurality of transistors receives the amplified bias current from the second one of the second plurality of transistors and sinks the amplified bias current into a node shared by a gate of a high voltage p-type transistor, thereby putting the node in the first logic state. Putting both nodes in the first logic state turns off the high voltage transistor.
Information query
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