发明授权
US07811848B2 Method for forming buried cavities within a semiconductor body, and semiconductor body thus made
有权
在半导体本体内形成掩埋空穴的方法以及由此制成的半导体本体
- 专利标题： Method for forming buried cavities within a semiconductor body, and semiconductor body thus made
- 专利标题（中）： 在半导体本体内形成掩埋空穴的方法以及由此制成的半导体本体
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申请号： US11486387申请日： 2006-07-12
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公开(公告)号： US07811848B2公开(公告)日： 2010-10-12
- 发明人: Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Francesco Villa
- 申请人： Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Francesco Villa
- 申请人地址： IT Agrate Brianza (MI)
- 专利权人： STMicroelectronics S.R.L.
- 当前专利权人： STMicroelectronics S.R.L.
- 当前专利权人地址： IT Agrate Brianza (MI)
- 代理机构： Graybeal Jackson LLP
- 代理商 Lisa K. Jorgenson; Paul F. Rusyn
- 优先权： ITTO2005A0478 20050712
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/76
摘要：
A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.