发明授权
US07812249B2 Multijunction photovoltaic cell grown on high-miscut-angle substrate
有权
在高杂散角底物上生长的多结光伏电池
- 专利标题： Multijunction photovoltaic cell grown on high-miscut-angle substrate
- 专利标题（中）： 在高杂散角底物上生长的多结光伏电池
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申请号： US10413906申请日： 2003-04-14
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公开(公告)号： US07812249B2公开(公告)日： 2010-10-12
- 发明人: Richard R. King , James H. Ermer , Peter C. Colter , Chris Fetzer
- 申请人： Richard R. King , James H. Ermer , Peter C. Colter , Chris Fetzer
- 申请人地址： US IL Chicago
- 专利权人： The Boeing Company
- 当前专利权人： The Boeing Company
- 当前专利权人地址： US IL Chicago
- 代理机构： Tung & Associates
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.
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