发明授权
- 专利标题： Solid-state imaging device and manufacturing method of the same
- 专利标题（中）： 固态成像装置及其制造方法相同
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申请号： US12239111申请日： 2008-09-26
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公开(公告)号： US07812380B2公开(公告)日： 2010-10-12
- 发明人: Tatsuya Hirata , Motonari Katsuno
- 申请人： Tatsuya Hirata , Motonari Katsuno
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Greenblum & Bernstein P.L.C.
- 优先权： JP2007-260297 20071003; JP2008-219969 20080828
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first region, under an end of the gate electrode in a gate width direction.
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