发明授权
- 专利标题: Low noise amplifier having improved linearity
- 专利标题(中): 低噪声放大器具有改善的线性度
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申请号: US11976911申请日: 2007-10-29
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公开(公告)号: US07812672B2公开(公告)日: 2010-10-12
- 发明人: Seung-Wook Lee , Deok Hee Lee , Eunseok Song , Joonbae Park , Kyeongho Lee
- 申请人: Seung-Wook Lee , Deok Hee Lee , Eunseok Song , Joonbae Park , Kyeongho Lee
- 申请人地址: US CA San Jose
- 专利权人: GCT Semiconductor, Inc.
- 当前专利权人: GCT Semiconductor, Inc.
- 当前专利权人地址: US CA San Jose
- 优先权: KR10-2006-0105463 20061030
- 主分类号: H03F3/30
- IPC分类号: H03F3/30
摘要:
Embodiments of the present general inventive concept include a low noise amplifier and method with an improved linearity while reducing a noise disadvantage (e.g., increase). One embodiment of a low noise amplifier can include a first transistor to receive an input signal at a control terminal thereof, a second transistor having a first terminal coupled to a second terminal of the first transistor, an envelope detector to output a control signal corresponding to a characteristic of the input signal and an envelope amplifier to amplify the control signal to be applied to a control terminal of the second transistor.
公开/授权文献
- US20080252377A1 Low noise amplifier having improved linearity 公开/授权日:2008-10-16