发明授权
US07813711B1 Stacking baseband circuits using deep n-well and increased supply voltage
有权
使用深n阱堆叠基带电路并增加电源电压
- 专利标题: Stacking baseband circuits using deep n-well and increased supply voltage
- 专利标题(中): 使用深n阱堆叠基带电路并增加电源电压
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申请号: US11688810申请日: 2007-03-20
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公开(公告)号: US07813711B1公开(公告)日: 2010-10-12
- 发明人: Brian J. Kaczynski
- 申请人: Brian J. Kaczynski
- 申请人地址: US CA San Jose
- 专利权人: Atheros Communications, Inc.
- 当前专利权人: Atheros Communications, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Bever, Hoffman & Harms, LLP
- 代理商 Jeanette S. Harms
- 主分类号: H04B1/28
- IPC分类号: H04B1/28
摘要:
A method of designing stacked circuits for an integrated circuit is described. In this method, a plurality of devices that are stackable may be determined. Some of those devices, i.e. a subset of stackable devices, may be formed in a deep n-well, thereby allowing that subset of stackable devices to receive an increased supply voltage. The remainder of the stackable devices may be formed in a standard n-well, thereby allowing such devices to receive a standard supply voltage. In one embodiment, the standard supply voltage may be VDD and the increased supply voltage may be 2×VDD. This method may be advantageously used in both the design of stacked circuits for and the implementation of stacked circuits in an integrated circuit.
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