发明授权
US07813895B2 Methods for plasma matching between different chambers and plasma stability monitoring and control
有权
不同室之间等离子体匹配的方法和等离子体稳定性监测与控制
- 专利标题： Methods for plasma matching between different chambers and plasma stability monitoring and control
- 专利标题（中）： 不同室之间等离子体匹配的方法和等离子体稳定性监测与控制
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申请号： US11829762申请日： 2007-07-27
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公开(公告)号： US07813895B2公开(公告)日： 2010-10-12
- 发明人: Sairaju Tallavarjula , Aaron Hunter , Joseph Ranish , Johanes Swenberg , Robert M. Haney
- 申请人： Sairaju Tallavarjula , Aaron Hunter , Joseph Ranish , Johanes Swenberg , Robert M. Haney
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Diehl Servilla, LLC
- 主分类号： G06F11/30
- IPC分类号： G06F11/30
摘要：
Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.