发明授权
- 专利标题: Erase history-based flash writing method
- 专利标题(中): 擦除基于历史的闪存写入方式
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申请号: US11727986申请日: 2007-03-29
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公开(公告)号: US07814263B2公开(公告)日: 2010-10-12
- 发明人: Ori Stern , Amir Mosek
- 申请人: Ori Stern , Amir Mosek
- 申请人地址: IL Kfar Saba
- 专利权人: SanDisk IL Ltd.
- 当前专利权人: SanDisk IL Ltd.
- 当前专利权人地址: IL Kfar Saba
- 代理机构: Martine Penilla & Gencarella, LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A method for writing into a flash memory device includes calculating a physical block for writing data thereto, checking whether the calculated physical block has been erased since a last power-up of the device and if it has been erased writing the data, or, if it has not been erased performing a refresh operation thereby obtaining a newly erased block since a last power-up that the data can be written to. The newly erased block may be the calculated block or another block of the flash memory.
公开/授权文献
- US20080104310A1 Erase history-based flash writing method 公开/授权日:2008-05-01
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