Invention Grant
- Patent Title: Doped iridium with improved high-temperature properties
- Patent Title (中): 掺杂铱具有改善的高温性能
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Application No.: US11995331Application Date: 2006-07-07
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Publication No.: US07815849B2Publication Date: 2010-10-19
- Inventor: Michael Koch , David Francis Lupton , Harald Manhardt , Tobias Mueller , Reinhold Weiland , Bernd Fischer
- Applicant: Michael Koch , David Francis Lupton , Harald Manhardt , Tobias Mueller , Reinhold Weiland , Bernd Fischer
- Applicant Address: DE Hanau
- Assignee: W.C. Heraeus GmbH
- Current Assignee: W.C. Heraeus GmbH
- Current Assignee Address: DE Hanau
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Priority: DE102005032591 20050711
- International Application: PCT/EP2006/006684 WO 20060707
- International Announcement: WO2007/006513 WO 20070118
- Main IPC: C22C5/00
- IPC: C22C5/00
Abstract:
An iridium alloy is produced having at least 85% by weight iridium, at least 0.005% by weight molybdenum, 0.001 to 0.6% by weight hafnium and, optionally, rhenium, the sum of molybdenum and hafnium being between 0.002 and 1.2% by weight. The iridium alloy is produced in a process, in which an IrMo and an IrHf master alloy, respectively, are created in an electric arc and immersed into an iridium melt, optionally together with Re.
Public/Granted literature
- US20080213123A1 Doped Iridium with Improved High-Temperature Properties Public/Granted day:2008-09-04
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