发明授权
US07816062B2 Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
有权
用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置
- 专利标题: Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
- 专利标题(中): 用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置
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申请号: US11592175申请日: 2006-11-03
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公开(公告)号: US07816062B2公开(公告)日: 2010-10-19
- 发明人: Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
- 申请人: Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-320319 20051104
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; G03C5/00 ; G21G5/00
摘要:
In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.
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