发明授权
- 专利标题： Organic thin-film transistor and fabrication method thereof and organic thin-film device
- 专利标题（中）： 有机薄膜晶体管及其制造方法及有机薄膜器件
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申请号： US10589800申请日： 2005-02-17
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公开(公告)号： US07816172B2公开(公告)日： 2010-10-19
- 发明人: Youji Inoue , Shizuo Tokito , Masafumi Kobayashi , Yuan Gao
- 申请人： Youji Inoue , Shizuo Tokito , Masafumi Kobayashi , Yuan Gao
- 申请人地址： JP Tokyo
- 专利权人： Kanto Denka Kogyo Co., Ltd.
- 当前专利权人： Kanto Denka Kogyo Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Ladas & Parry LLP
- 优先权： JP2004-041397 20040218
- 国际申请： PCT/JP2005/002495 WO 20050217
- 国际公布： WO2005/078816 WO 20050825
- 主分类号： H01L51/30
- IPC分类号： H01L51/30 ; H01L51/40
摘要：
An organic thin-film transistor having a higher carrier-mobility, a method of fabricating the organic thin-film transistor and an organic thin-film device including the organic thin-film transistor are provided. In an organic thin-film transistor having an organic semiconductor layer, the organic semiconductor layer contains a fluorinated acene compound which is represented by a formula of C4n+2F2n+4, wherein n is an integer of 2 or greater. The fluorinated acene compound is preferably tetradecafluoropentacene or dodecafluoronaphthacene.
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