发明授权
- 专利标题： Process for fabricating a dielectric film using plasma oxidation
- 专利标题（中）： 使用等离子体氧化制造电介质膜的工艺
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申请号： US09918853申请日： 2001-07-30
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公开(公告)号： US07816188B2公开(公告)日： 2010-10-19
- 发明人: Michael A. Vyvoda , N. Johan Knall , James M. Cleeves
- 申请人： Michael A. Vyvoda , N. Johan Knall , James M. Cleeves
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： Brinks Hofer Gilson & Lione
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A high density plasma oxidation process is provided in which a dielectric film is formed having a predetermined thickness. Plasma oxidation conditions are provided such that the growth rate of the dielectric film is limited in order to produce dielectric layer having a precise thickness and uniformity. The high density plasma oxidation process can be used to fabricate gate oxide layers, passivation layers and antifuse layers in semiconductor devices such as semiconductor memory devices and multi-level memory arrays.
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