发明授权
- 专利标题: Method for fabricating an ultra thin silicon on insulator
- 专利标题(中): 用于制造绝缘体上的超薄硅的方法
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申请号: US12042936申请日: 2008-03-05
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公开(公告)号: US07816224B2公开(公告)日: 2010-10-19
- 发明人: Kevin K. Chan , Jakub Kedzierski , Raymond M. Sicina
- 申请人: Kevin K. Chan , Jakub Kedzierski , Raymond M. Sicina
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
In one embodiment, the invention is a method for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas.