发明授权
US07816254B2 Film forming method, fabrication process of semiconductor device, computer-readable recording medium and sputtering apparatus
有权
薄膜形成方法，半导体器件的制造工艺，计算机可读记录介质和溅射装置
- 专利标题： Film forming method, fabrication process of semiconductor device, computer-readable recording medium and sputtering apparatus
- 专利标题（中）： 薄膜形成方法，半导体器件的制造工艺，计算机可读记录介质和溅射装置
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申请号： US11466511申请日： 2006-08-23
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公开(公告)号： US07816254B2公开(公告)日： 2010-10-19
- 发明人: Tatsuo Muraoka , Kazunori Kobayashi
- 申请人： Tatsuo Muraoka , Kazunori Kobayashi
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 优先权： JP2006-123702 20060427
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A film-forming method for forming a metal film on a substrate by a sputtering process includes the steps of depressurizing a processing space, in which deposition of the metal film is caused by the sputtering process, applying a DC bias voltage between the substrate and a target disposed in the processing space so as to face the substrate, and igniting plasma by introducing secondary electrons to the processing space from a secondary electron source.
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