发明授权
- 专利标题: Power supply circuit using insulated-gate field-effect transistors
- 专利标题(中): 使用绝缘栅场效应晶体管的电源电路
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申请号: US12250999申请日: 2008-10-14
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公开(公告)号: US07816976B2公开(公告)日: 2010-10-19
- 发明人: Ryu Ogiwara , Daisaburo Takashima
- 申请人: Ryu Ogiwara , Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-268226 20071015
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A power supply circuit is disclosed. The power supply circuit is provided with a reference voltage generation circuit to receive a voltage from a higher voltage supply so as to generate a reference voltage. The reference voltage from the reference voltage generation circuit is outputted to a power supply voltage generation circuit. The power supply voltage generation circuit boosts the reference voltage to generate a boosted power supply voltage. The boosted power supply voltage is inputted to a bandgap reference circuit. The bandgap reference circuit generates a reference voltage by using the boosted power supply voltage.
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