Invention Grant
US07817464B2 Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same
有权
使用GeBiTe层作为相变材料层的相变存储单元，包括该相变材料层的相变存储器件，包括该GeBiTe层的相变材料层的电子系统及其制造方法
- Patent Title: Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same
- Patent Title (中): 使用GeBiTe层作为相变材料层的相变存储单元，包括该相变材料层的相变存储器件，包括该GeBiTe层的相变材料层的电子系统及其制造方法
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Application No.: US11747395Application Date: 2007-05-11
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Publication No.: US07817464B2Publication Date: 2010-10-19
- Inventor: Bong-Jin Kuh , Yong-Ho Ha , Doo-Hwan Park , Jeong-Hee Park , Han-Bong Ko
- Applicant: Bong-Jin Kuh , Yong-Ho Ha , Doo-Hwan Park , Jeong-Hee Park , Han-Bong Ko
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2006-0045298 20060519
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory cell includes an interlayer insulating layer formed on a semiconductor substrate, and a first electrode and a second electrode disposed in the interlayer insulating layer. A phase change material layer is disposed between the first and second electrodes. The phase change material layer may be an undoped GeBiTe layer, a doped GeBiTe layer containing an impurity or a doped GeTe layer containing an impurity. The undoped GeBiTe layer has a composition ratio within a range surrounded by four points (A1(Ge21.43, Bi16.67, Te61.9), A2(Ge44.51, Bi0.35, Te55.14), A3(Ge59.33, Bi0.5, Te40.17) and A4(Ge38.71, Bi16.13, Te45.16)) represented by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi) and tellurium (Te). The doped GeBiTe layer contains an impurity and has a composition ratio within a range surrounded by four points (D1(Ge10, Bi20, Te70), D2(Ge30, Bi0, Te70), D3(Ge70, Bi0, Te30) and D4(Ge50, Bi20, Te30)) represented by coordinates on the triangular composition diagram.
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