It is enabled to provide that a light emitting device have an electron blocking layer (106) positioned between tunnel junctions (107, 108) and an active layer (104). The electron blocking layer (106) has an energy of conduction band edge higher than that of the active layer (605), and is composed of a material containing substantially no aluminum. It suppresses leakage of electrons from an n-type layer through a p-layer to an n-type layer. It is also enabled to provide that a light emitting device is capable of preventing the electron blocking layer (106) from being oxidized in the process of manufacturing by using a layer containing no aluminum for the electron blocking layer (106).