发明授权
- 专利标题： Microelectronic devices and methods
- 专利标题（中）： 微电子器件及方法
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申请号： US11932793申请日： 2007-10-31
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公开(公告)号： US07820488B2公开(公告)日： 2010-10-26
- 发明人: Sri M. Sri-Jayantha , Gareth Hougham , Sung Kang , Lawrence Mok , Hien Dang , Arun Sharma
- 申请人： Sri M. Sri-Jayantha , Gareth Hougham , Sung Kang , Lawrence Mok , Hien Dang , Arun Sharma
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： F. Chau & Associates, LLC
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A microelectronic device is made of a semiconductor substrate, a heat generating component in a layer thereof, and a body within the remaining semiconductor substrate. The body is made of materials which have a high thermal inertia and/or thermal conductivity. When high thermal conductivity materials are used, the body acts to transfer the heat away from the substrate to a heat sink.
公开/授权文献
- US20080064143A1 Microelectronic Devices and Methods 公开/授权日：2008-03-13