A GaN-based semiconductor light-emitting device 1 includes a stacked body 10A having the component layers 12 that include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layer 14 made of metal and a second bonding layer 33 formed on an electroconductive substrate 31, adapted to have bonded to the first bonding layer 14 the surface thereof lying opposite the side on which the electroconductive substrate 31 is formed, made of a metal of the same crystal structure as the first bonding layer 14, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.