发明授权
- 专利标题： Stressed semiconductor device and method for making
- 专利标题（中）： 强调半导体器件及其制造方法
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申请号： US12414763申请日： 2009-03-31
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公开(公告)号： US07821055B2公开(公告)日： 2010-10-26
- 发明人: Konstantin V. Loiko , Cheong M. Hong , Sung-Taeg Kang , Taras A. Kirichenko , Brian A. Winstead
- 申请人： Konstantin V. Loiko , Cheong M. Hong , Sung-Taeg Kang , Taras A. Kirichenko , Brian A. Winstead
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Daniel D. Hill; James L. Clingan, Jr.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/792
摘要：
A method of making a semiconductor device on a semiconductor layer includes forming a gate dielectric and a first layer of gate material over the gate dielectric. The first layer is etched to remove a portion of the first layer of gate material over a first portion of the semiconductor layer and to leave a select gate portion. A storage layer is formed over the select gate portion and over the first portion of the semiconductor layer. A second layer of gate material is formed over the storage layer. The second layer of gate material is etched to remove a first portion of the second layer of gate material over a first portion of the select gate portion. A portion of the first portion of the select gate is etched out to leave an L-shaped select structure. The result is a memory cell with an L-shaped select gate.
公开/授权文献
- US20100244121A1 STRESSED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING 公开/授权日：2010-09-30
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