发明授权
- 专利标题： Nonvolatile semiconductor memory and method for manufacturing the same
- 专利标题（中）： 非易失性半导体存储器及其制造方法
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申请号： US11970992申请日： 2008-01-08
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公开(公告)号： US07821058B2公开(公告)日： 2010-10-26
- 发明人: Masaru Kidoh , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi , Hiroyasu Tanaka , Yasuyuki Matsuoka , Yoshio Ozawa , Mitsuru Sato
- 申请人： Masaru Kidoh , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi , Hiroyasu Tanaka , Yasuyuki Matsuoka , Yoshio Ozawa , Mitsuru Sato
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-002152 20070110
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247 ; H01L29/792
摘要：
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insulating film, and a second insulating film formed around the charge storage film; an electrode extending two-dimensionally to surround the charge storage insulating film, the electrode having a groove; and a metal silicide formed on a sidewall of the groove.
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