发明授权
- 专利标题: Physical quantity sensor and method for manufacturing the same
- 专利标题(中): 物理量传感器及其制造方法
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申请号: US12385848申请日: 2009-04-21
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公开(公告)号: US07821085B2公开(公告)日: 2010-10-26
- 发明人: Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
- 申请人: Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
- 申请人地址: JP Kariya
- 专利权人: Denso Corporation
- 当前专利权人: Denso Corporation
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2008-111280 20080422; JP2009-011903 20090122
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; H01L29/82 ; H01L29/84
摘要:
A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.
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