发明授权
- 专利标题: Semiconductor device and method for producing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12061097申请日: 2008-04-02
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公开(公告)号: US07821121B2公开(公告)日: 2010-10-26
- 发明人: Tetsuo Yoshizawa , Shin-ichi Urakawa , Takashi Miyake
- 申请人: Tetsuo Yoshizawa , Shin-ichi Urakawa , Takashi Miyake
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2007-115616 20070425
- 主分类号: H01L23/04
- IPC分类号: H01L23/04
摘要:
In a semiconductor device which has through holes in an end face, in which a semiconductor element is fixedly mounted on a face of a substrate which has a wiring pattern, which is conductive to the wiring portion formed in the through hole, in at least one face, in which electrodes of the semiconductor element are electrically connected to the wiring pattern, and in which the face of the substrate which has the semiconductor element is coated with a resin, the through hole has a through hole land with a width of 0.02 mm or more, which is conductive to the wiring portion, in a substrate face, and the wiring portion and the through hole land are exposed.
公开/授权文献
- US20080265355A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 公开/授权日:2008-10-30
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