发明授权
- 专利标题： Device to protect a semiconductor device from electrostatic discharge by efficiently discharging a micro current
- 专利标题（中）： 通过有效地放电微电流来保护半导体器件免受静电放电的装置
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申请号： US12031132申请日： 2008-02-14
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公开(公告)号： US07821752B2公开(公告)日： 2010-10-26
- 发明人: Nak Heon Choi
- 申请人： Nak Heon Choi
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2007-0016259 20070215
- 主分类号： H02H9/00
- IPC分类号： H02H9/00
摘要：
A device to protect a semiconductor device from electrostatic discharge is disclosed. In order to protect an internal circuit from electrostatic discharge, the semiconductor electrostatic protection device includes a transfer unit for transferring static electricity inputted to an input/output terminal to a first power line. A driving unit is also included for outputting a driving voltage corresponding to a potential difference between the input/output terminal and the first power line. Finally, a discharge unit for discharging the static electricity inputted to the input/output terminal to a second power line by way of the driving voltage is provided. The semiconductor electrostatic protection device prevents damage to an internal circuit due to the voltage drop of an intermediate medium by reducing the intermediate medium on a static electricity discharge path.
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