发明授权
- 专利标题: Memory device and memory device heat treatment method
- 专利标题(中): 记忆体和记忆体热处理方法
-
申请号: US12219104申请日: 2008-07-16
-
公开(公告)号: US07821828B2公开(公告)日: 2010-10-26
- 发明人: Seung-Hwan Song , Jun Jin Kong , Jae Hong Kim , Young Hwan Lee , Dong Hyuk Chae , Tae Hun Kim , Kyoung Lae Cho
- 申请人: Seung-Hwan Song , Jun Jin Kong , Jae Hong Kim , Young Hwan Lee , Dong Hyuk Chae , Tae Hun Kim , Kyoung Lae Cho
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2008-0012291 20080211
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device.
公开/授权文献
- US20090201729A1 Memory device and memory device heat treatment method 公开/授权日:2009-08-13
信息查询