发明授权
US07821857B2 Input/output line sense amplifier and semiconductor memory device using the same
有权
输入/输出线路读出放大器和半导体存储器件使用相同
- 专利标题: Input/output line sense amplifier and semiconductor memory device using the same
- 专利标题(中): 输入/输出线路读出放大器和半导体存储器件使用相同
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申请号: US12586752申请日: 2009-09-28
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公开(公告)号: US07821857B2公开(公告)日: 2010-10-26
- 发明人: Chang-Il Kim
- 申请人: Chang-Il Kim
- 申请人地址: KR Icheon-si
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: Cooper & Dunham LLP
- 代理商 John P. White
- 优先权: KR10-2007-0062548 20070625
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
An input/output (I/O) line sense amplifier includes a buffer unit, a sense amplifier, and a precharge unit. The buffer unit is driven by a first level voltage to buffer a strobe signal, and the sense amplifier is driven by a second level voltage to amplify a signal of an I/O line in response to an output signal of the buffer unit. The precharge unit is driven by the first level voltage to precharge an output signal of the sense amplifier in response to the output signal of the buffer unit.
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