A method of manufacturing a metal-insulator-metal (MIM) capacitor that includes at least one of the following steps: Sequentially forming a bottom metal film, an insulating film, and a top metal film over a wafer. Forming a first pattern for etching the top metal film and the insulating film. Etching the top metal film and the insulating film, using the formed first pattern, and then stripping the first pattern. Conducting a heat treatment and a cooling split for the wafer. Forming a metal pattern for etching the bottom metal film. Etching the bottom metal film, using the formed metal pattern, and then stripping the metal pattern.