Invention Grant
- Patent Title: Development device and development method
- Patent Title (中): 开发设备和开发方法
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Application No.: US10584264Application Date: 2004-12-24
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Publication No.: US07823534B2Publication Date: 2010-11-02
- Inventor: Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
- Applicant: Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
- Applicant Address: JP Tokyo-To
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo-To
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-435897 20031226; JP2004-233617 20040810
- International Application: PCT/JP2004/019417 WO 20041224
- International Announcement: WO2005/064656 WO 20050714
- Main IPC: B05C5/02
- IPC: B05C5/02 ; B05D1/36

Abstract:
A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
Public/Granted literature
- US20090130614A1 Development device and development method Public/Granted day:2009-05-21
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