Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
- Patent Title (中): 基板加工装置及基板处理方法
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Application No.: US11928694Application Date: 2007-10-30
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Publication No.: US07823597B2Publication Date: 2010-11-02
- Inventor: Katsuhiko Miya
- Applicant: Katsuhiko Miya
- Applicant Address: JP
- Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2006-320443 20061128
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/00

Abstract:
DIW is supplied toward a surface of a substrate to form a lower layer liquid film, which is then frozen to form a lower layer frozen film. Further, DIW cooled down to a temperature at which the lower layer frozen film will not melt is supplied toward a surface of the lower layer frozen film to form an upper layer liquid film, which is then frozen to form an upper layer frozen film in a layered structure. DIW which is at room temperature is thereafter supplied, thereby melting the entirety of the lower layer frozen film and the upper layer frozen film to remove these films together with particles off from the surface of the substrate.
Public/Granted literature
- US20080121252A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2008-05-29
Information query
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