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US07824243B2 Chemical mechanical planarization methods 有权
化学机械平面化方法

Chemical mechanical planarization methods
Abstract:
A semiconductor process includes polishing a substrate with a slurry in an enclosure. Polishing the substrate is stopped. First mist is injected into the enclosure, such that the first mist has at least about 80% of saturation of a liquid or gaseous solvent in a carrier within the enclosure.
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