Invention Grant
- Patent Title: Silicon wafer and method for manufacturing the same
- Patent Title (中): 硅晶片及其制造方法
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Application No.: US11184869Application Date: 2005-07-20
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Publication No.: US07824493B2Publication Date: 2010-11-02
- Inventor: Toshiaki Ono , Wataru Sugimura , Masataka Hourai
- Applicant: Toshiaki Ono , Wataru Sugimura , Masataka Hourai
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Mitsubishi Silicon Corporation
- Current Assignee: Sumitomo Mitsubishi Silicon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Priority: JP2004-214983 20040722
- Main IPC: C30B25/00
- IPC: C30B25/00 ; C30B28/12
Abstract:
A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.
Public/Granted literature
- US20060016385A1 Silicon wafer and method for manufacturing the same Public/Granted day:2006-01-26
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