Invention Grant
- Patent Title: Plasma treatment apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US10807472Application Date: 2004-03-24
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Publication No.: US07824520B2Publication Date: 2010-11-02
- Inventor: Osamu Nakamura
- Applicant: Osamu Nakamura
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2003-086384 20030326
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H05B31/26 ; B44C1/22 ; C03C15/00

Abstract:
In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offered in view of the above situation, and provides a plasma treatment apparatus for suppressing generation of a particle. According to the present invention, plasma is generated in a limited minimum region to be treated by a plasma treatment over a substrate to be treated. Generation of a particle is suppressed to a minimum by providing a plurality of plasma generation units generating minimum plasma having a similar size as the limited minimum region, changing a relative position of the plurality of plasma generation units and the substrate to be treated, and performing a plasma treatment to a limited predetermined region.
Public/Granted literature
- US20040238124A1 Plasma treatment apparatus Public/Granted day:2004-12-02
Information query
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