Invention Grant
- Patent Title: Method for manufacturing probe structure
- Patent Title (中): 探针结构的制造方法
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Application No.: US11782949Application Date: 2007-07-25
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Publication No.: US07824561B2Publication Date: 2010-11-02
- Inventor: Bong Hwan Kim , Bum Jin Park , Jong Bok Kim , Chi Woo Lee
- Applicant: Bong Hwan Kim , Bum Jin Park , Jong Bok Kim , Chi Woo Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Will Technology Co., Ltd.
- Current Assignee: Will Technology Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0073790 20060804
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.
Public/Granted literature
- US20080029479A1 Method For Manufacturing Probe Structure Public/Granted day:2008-02-07
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