Invention Grant
- Patent Title: Sensor structure and method of fabricating the same
- Patent Title (中): 传感器结构及其制造方法
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Application No.: US10913422Application Date: 2004-08-09
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Publication No.: US07824618B2Publication Date: 2010-11-02
- Inventor: Yong Shin Kim , Yun Tae Kim , Hae Sik Yang , Young Jun Kim , Seung Chul Ha , Yoon Seok Yang
- Applicant: Yong Shin Kim , Yun Tae Kim , Hae Sik Yang , Young Jun Kim , Seung Chul Ha , Yoon Seok Yang
- Applicant Address: KR Daejeon-shi
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon-shi
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2003-0097259 20031226
- Main IPC: G01N27/00
- IPC: G01N27/00

Abstract:
Provided is a sensor structure comprising a heater and a temperature sensor at the center of a membrane having a well structure, allowing a temperature to be rapidly controlled with low power, and the object is analyzed using a conductivity change measured at two or more substrate temperatures with a pair of detecting electrode and a detecting layer implemented on the heater, wherein the sensing layer can include a conductive particle and a non-conductive organic composite.
Public/Granted literature
- US20050142034A1 Sensor structure and method of fabricating the same Public/Granted day:2005-06-30
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