Invention Grant
- Patent Title: Porous object based on silicon carbide and process for producing the same
- Patent Title (中): 基于碳化硅的多孔物体及其制造方法
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Application No.: US12193961Application Date: 2008-08-19
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Publication No.: US07824765B2Publication Date: 2010-11-02
- Inventor: Takuya Hiramatsu , Kenji Morimoto
- Applicant: Takuya Hiramatsu , Kenji Morimoto
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-045417 20060222
- Main IPC: B32B3/26
- IPC: B32B3/26

Abstract:
A silicon carbide-based porous article comprising silicon carbide particles as an aggregate, metallic silicon and an aggregate derived from siliceous inorganic particles to form pores through volume shrinkage by heat treatment, wherein the porosity is 45 to 70%, and the average pore diameter is 10 to 20 μm is provided. Also provided is a method for producing a silicon carbide-based porous article, comprising; adding inorganic particles to form pores through volume shrinkage by heat treatment to a raw-material mixture containing silicon carbide particles and metallic silicon, then forming into an intended shape, calcinating and firing the resultant green body, forming pores through volume shrinkage of the inorganic particles by heat treatment, and the shrunk inorganic particles being present as an aggregate in the porous article.
Public/Granted literature
- US20090029103A1 POROUS OBJECT BASED ON SILICON CARBIDE AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2009-01-29
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