Invention Grant
- Patent Title: Method for forming a fine pattern of a semiconductor device
- Patent Title (中): 用于形成半导体器件的精细图案的方法
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Application No.: US11765675Application Date: 2007-06-20
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Publication No.: US07824841B2Publication Date: 2010-11-02
- Inventor: Jae Chang Jung
- Applicant: Jae Chang Jung
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2006-0120723 20061201
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
A method for forming a pattern of a semiconductor device using an immersion lithography process includes pretreating a top portion of the photoresist film with an alkane solvent or alcohol in the immersion lithography process to form a uniform over-coating film.
Public/Granted literature
- US20080131814A1 METHOD FOR FORMING A FINE PATTERN OF A SEMICONDUCTOR DEVICE Public/Granted day:2008-06-05
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