Invention Grant
- Patent Title: Method of patterning a positive tone resist layer overlaying a lithographic substrate
- Patent Title (中): 图案化叠加光刻基板的正色调抗蚀剂层的方法
-
Application No.: US11243190Application Date: 2005-10-05
-
Publication No.: US07824842B2Publication Date: 2010-11-02
- Inventor: Jozef Maria Finders
- Applicant: Jozef Maria Finders
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G03C5/00

Abstract:
A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding mask patterns of semi dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.
Public/Granted literature
- US20070077523A1 Method of patterning a positive tone resist layer overlaying a lithographic substrate Public/Granted day:2007-04-05
Information query
IPC分类: