Invention Grant
- Patent Title: Tapered edge bead removal process for immersion lithography
- Patent Title (中): 用于浸没式光刻的锥形边缘珠去除工艺
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Application No.: US11857764Application Date: 2007-09-19
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Publication No.: US07824846B2Publication Date: 2010-11-02
- Inventor: Colin J. Brodsky
- Applicant: Colin J. Brodsky
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Ian D. MacKinnon
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter.
Public/Granted literature
- US20090075217A1 TAPERED EDGE BEAD REMOVAL PROCESS FOR IMMERSION LITHOGRAPHY Public/Granted day:2009-03-19
Information query
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