Invention Grant
- Patent Title: Fabrication method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12436647Application Date: 2009-05-06
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Publication No.: US07824932B2Publication Date: 2010-11-02
- Inventor: Hideharu Kobashi , Hiroshi Maki , Masayuki Mochizuki , Yoshiaki Makita
- Applicant: Hideharu Kobashi , Hiroshi Maki , Masayuki Mochizuki , Yoshiaki Makita
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-241559 20060906
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A technique is provided which can exactly recognize a chip to be picked up when picking up the chip from a wafer sheet in a process of die bonding a thin chip. A camera is coupled to one end of a lens barrel, an objective lens is attached to an opposite end of the lens barrel, and an image of a main surface of a chip is photographed through the objective lens. A surface-emitting lighting unit, a diffusing plate and a half mirror are internally provided between the lens barrel and the chip. Further, another lens barrel having a coaxial drop lighting function of radiating light to the main surface of the chip along the same optical axis as that of the camera is disposed.
Public/Granted literature
- US20090215204A1 FABRICATION METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2009-08-27
Information query
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