Invention Grant
- Patent Title: Method of determining n-well scattering effects on FETs
- Patent Title (中): 确定FET的n-阱散射效应的方法
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Application No.: US10906826Application Date: 2005-03-08
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Publication No.: US07824933B2Publication Date: 2010-11-02
- Inventor: Micah Galland , Terence B. Hook
- Applicant: Micah Galland , Terence B. Hook
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent David Cain
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26
Abstract:
A process is provided for determining the effects of scattering from the edge of a resist during a doping process. Edges of a resist which has been patterned to create an n-well are simulated and individually stepped across a predetermined region in predetermined step sizes. The step sizes may vary from step to step after each step, the scattering effects due to the resist edge at its particular location is determined. A resist of virtually any shape may be divided into its component edges and each edge may be individually stepped during the process.
Public/Granted literature
- US20060205098A1 METHOD OF DETERMINING N-WELL SCATTERING EFFECTS ON FETS Public/Granted day:2006-09-14
Information query
IPC分类:
