Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12078196Application Date: 2008-03-27
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Publication No.: US07824950B2Publication Date: 2010-11-02
- Inventor: Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
- Applicant: Yohei Monma , Daiki Yamada , Hidekazu Takahashi , Yuusuke Sugawara , Kazuo Nishi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-118413 20070427
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
Public/Granted literature
- US20080265351A1 Semiconductor device and method of fabricating the same Public/Granted day:2008-10-30
Information query
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