Invention Grant
US07824951B2 Method of fabricating an integrated circuit having a memory including a low-k dielectric material
有权
制造具有包含低k电介质材料的存储器的集成电路的方法
- Patent Title: Method of fabricating an integrated circuit having a memory including a low-k dielectric material
- Patent Title (中): 制造具有包含低k电介质材料的存储器的集成电路的方法
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Application No.: US12050727Application Date: 2008-03-18
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Publication No.: US07824951B2Publication Date: 2010-11-02
- Inventor: Thomas Happ , Shoaib Zaidi
- Applicant: Thomas Happ , Shoaib Zaidi
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig, Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.
Public/Granted literature
- US20080158943A1 METHOD OF FABRICATING AN INTEGRATED CIRCUIT HAVING A MEMORY INCLUDING A LOW-K DIELECTRIC MATERIAL Public/Granted day:2008-07-03
Information query
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